TYPICAL CHARACTERISTICS — 520 MHz
50
45
VDD = 13.6 Vdc, Pin = 0.6 W
40 VDD = 13.6 Vdc, Pin = 0.3 W
35 VDD = 12.5 Vdc, Pin = 0.6 W
30
25
20
15
VDD = 12.5 Vdc
Pin = 0.3 W
10
5
f = 520 MHz
0
0
1
2
3
4
5
6
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
20
19
VDD = 13.6 Vdc, IDQ = 10 mA
f = 520 MHz
18
90
80
ηD
70
17
60
16
50
Gps
15
40
14
Pout
30
13
20
12
10
11
0.03
0.1
0
1
3
Pin, INPUT POWER (WATTS)
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
520
0.72 + j1.77
1.54 + j0.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Input
Matching
50 Ω
Network
Device
Under
Test
Output
Matching
Network
50 Ω
Zsource
Zload
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
7