2DA2018 View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

2DA2018

12V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Diodes Incorporated. 

Absolute Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Peak Pulse Collector Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

Thermal Characteristics

Characteristic

Power Dissipation (Note 5) @ TA = 25C

Thermal Resistance, Junction to Ambient (Note 5) @ TA = 25C

Operating and Storage Temperature Range

Note:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

Symbol

PD

RJA

TJ, TSTG

ESD Ratings (Note 6)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Note: 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Symbol

ESD HBM

ESD MM

Value

-15

-12

-7

-500

-1

2DA2018

Unit

V

V

V

mA

A

Value

150

833

-55 to +150

Unit

mW

°C/W

°C

Value

4,000

400

Unit JEDEC Class

V

3A

V

C

Thermal Characteristics and Derating Information

160

140

120

100

80

60

40

20 RJA = 833°C/W

0

0 20 40 60 80 100 120 140 160

TA, AMBIENT TEMPERATURE (C)

Fig. 1 Power Dissipation vs. Ambient Temperature

100

80

60

Single Pulse

RJA(t) = r(t) * RJA

RJA = 470°C/W

TJ - TA = P * RJA(t)

Duty Cycle, D = t1/t2

40

20

0

0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIME (s)

Fig. 2 Single Pulse Maximum Power Dissipation

2DA2018

Document number: DS31823 Rev. 4 - 2

2 of 7

www.diodes.com

May 2018

© Diodes Incorporated

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