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2DA2018 View Datasheet(PDF) - Diodes Incorporated.

Part Name
Description
Manufacturer
2DA2018 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2DA2018
Thermal Characteristics and Derating Information (continued)
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
D = 0.9
RJA(t) = r(t) * RJA
RJA = 470°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
100
1,000
Electrical Characteristics (@TA = 25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min Typ
-15
-12
-7
Collector Cutoff Current
ICBO
Emitter Cutoff Current
DC Current Gain (Note 7)
Collector-Emitter Saturation Voltage (Note 7)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
IEBO
hFE
VCE(sat)
Cobo
fT
ton
td
tr
toff
ts
tf
270
7.4
260
40
18
22
106
87
19
Note: 7. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
Max
-20
-50
-20
680
-250
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Unit
V
V
V
nA
µA
nA
mV
pF
MHz
ns
ns
ns
ns
ns
ns
Test Condition
IC = -100µA, IE = 0
IC = -1mA, IB = 0
IE = -100µA, IC = 0
VCB = -15V, IE = 0
VCB = -15V, IE = 0, TA = 150°C
VEB = -6V, IC = 0
VCE = -2V, IC = -10mA
IC = -200mA, IB = -10mA
VCB = -10V, f = 1.0MHz
VCE = -2V, IC = -10mA, f = 100MHz
VCC = -6V
IC = -200mA, IB1 = -IB2 = -10mA
2DA2018
Document number: DS31823 Rev. 4 - 2
3 of 7
www.diodes.com
May 2018
© Diodes Incorporated

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