JANS2N3866UB View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

JANS2N3866UB

NPN SILICON HIGH-FREQUENCY TRANSISTOR

Microsemi Corporation 

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NPN SILICON

HIGH-FREQUENCY TRANSISTOR

Qualified per MIL-PRF-19500/398

DEVICES

2N3866 2N3866UB

2N3866A 2N3866AUB

LEVELS

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

30

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

305

Vdc

Collector Current

IC

400

mAdc

Total Power Dissipation

@ TA = +25°C

2N3866, A

2N3866UB / AUB

PT

1.0

0.5

W

Operating & Storage Junction Temperature Range

Tj, Tstg

-65 to +200

°C

Thermal Resistance, Junction-to-Case

RθJC

60.0

°C/W

NOTE:

1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB /

2N3866AUB) above TA > +25°C

2. TA = room ambient as defined in the general requirements of MIL-PRF-19500

3. PT = 2.9W at TC = +25°C, derate at 16.6mW/°C above TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 5.0mAdc

Collector-Base Breakdown Voltage

IC = 100µAdc

Emitter-Base Breakdown Voltage

IE = 100µAdc

Collector-Emitter Cutoff Current

VCE = 28Vdc

Collector-Emitter Cutoff Current

VCE = 55Vdc

V(BR)CEO

30

Vdc

V(BR)CBO

60

Vdc

V(BR)EBO

3.5

Vdc

ICEO

20 μAdc

ICES1

100 μAdc

TO-39 (TO-205AD)

2N3866, 2N3866A

UB Package

2N3866UB, 2N3866AUB

T4-LDS-0175 Rev. 1 (101096)

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