JANS2N3866A View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

JANS2N3866A

NPN SILICON HIGH-FREQUENCY TRANSISTOR

Microsemi Corporation 

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 100μAdc, VCE = 5.0Vdc

IC = 360mAdc, VCE = 5.0Vdc

Symbol

2N3866, 2N3866UB

2N3866A, 2N3866AUB

2N3866, 2N3866UB

hFE

2N3866A, 2N3866AUB

Collector-Emitter Saturation Voltage

IC = 100mAdc, IB = 10mAdc

Collector-Emitter Cutoff Current – High Temperature Operation

VCE = 55Vdc

TA = +150°C

Forward Current Transfer Ratio – Low Temperature Operation

VCE = 5.0Vdc

IC = 50mAdc, TA = -55°C

2N3866, 2N3866UB

2N3866A, 2N3866AUB

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Magnitude of Common Emitter Small–Signal Short-Circuit Forward

Current Transfer Ratio

IC = 50mAdc, VCE = 15Vdc, f = 100MHz

2N3866, 2N3866UB

2N3866A, 2N3866AUB

Output Capacitance

VCB = 28Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

VCE(sat)

ICES2

HFE3

Symbol

|hfe|

Cobo

POWER OUTPUT CHARACTERISTICS

Parameters / Test Conditions

Power Output

VCC = 28Vdc; Pin = 0.15W; f = 400MHz *

VCC = 28Vdc; Pin = 0.075W; f = 400MHz *

Collector Efficiency

VCC = 28Vdc; Pin = 0.15W; f = 400MHz

VCC = 28Vdc; Pin = 0.075W; f = 400MHz

* See Figure 4 on /398

Clamp Inductive

Collector-Emitter Breakdown Voltage

VBE = 1.5Vdc

IC = 40mAdc

(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.

Symbol

P1out

P2out

n1

n2

V(BR)CEX

Min.

15

25

5

8

7

12

Min.

2.5

4.0

Min.

1.0

0.5

45

40

55

Max.

Unit

200

200

1.0

Vdc

2.0

mAdc

Max.

Unit

8.0

7.5

3.5

pF

Max.

Unit

2.0

W

%

Vdc

T4-LDS-0175 Rev. 1 (101096)

Page 2 of 4

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