JANTX2N3999 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
JANTX2N3999 Datasheet PDF : 2 Pages
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TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
Devices
2N3996
2N3997
2N3998
2N3999
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (2)
@ TC = +1000C (3)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50%
2) Derate linearly 11.4 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC > +1000C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
Value
80
100
8.0
0.5
5.0
10(1)
2.0
30
-65 to +200
Symbol
RθJC
Max.
3.33
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
ICEO
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 0
ICES
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
VEB = 8.0 Vdc
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
TO-111*
*See appendix A for
package outline
Min. Max.
Unit
80
Vdc
100
Vdc
10
µAdc
200
ηAdc
200
ηAdc
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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