2N4170 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2N4170

Silicon Controlled Rectifiers Reverse Blocking Trlode Thyristors

New Jersey Semiconductor 

THERMAL CHARACTERISTICS

Chaiaotarlttlo

Thermal Resistance, Junction to Cage

Thermal Raa!«ane«, C«M to Ambient

(Saa Figure 11) 2N4183-S8

'lndl««M JEDEC R>GM««t DM.

Symbol TVP Mix Unit

RflJC 1.5 IS" •c/w

"9CA GO — •c/w

ELECTRICAL CHARACTERISTICS (TC - 26'C unleaa otherwi«e noted.)

Characterlatlo

"Peak Forward or Reverse Blocking Current

(Rated V0HM °' VRRM. 9** °P«<»> TC - 26°C

TC - WC

Qttta Trigger Current (Continuous dc). Note 1

(VD-7Vde,RL-100n)

•IVo - 7vdo, RL- mo o> TC = -40*0

Gate Trigger Voltage (Continuous do)

IVp - 7 vdo, RL- loon)

•Ms - 7 vdo, RL - 100 n, TC - -*ro

•ivp - 7 vdo, RL - 100 n, TC - iowi

•Forward "On" Voltage (pulced, 1 ma max, duty cycle « 1%)

(ITM-1S,7A)

Holding Current

|V[> " 7 Vdc, gate open)

*IVp = 7 Vdo, gate open, TC - -40«C)

Turn-On Time ltd + tr)

(|Q - 20 mAdc, IF - B Adc, VD = Rated VQRM)

Turn-Off Time

(lF=.6Adc, IR = 6Ado)

tip *• 6 Ado, In - 6 Ado, TC - 10tttJ, Vrj - Rated VpflM)

(dWdt - 3D V/wo)

Forward Voltage Application Rate (Exponential)

(Gate opan, TC - IOO-C.VD - Rated VORM)

Symbol

lORM' IRRM

IGT

VQT

TM

IH

'on

•off

dv/dt

Mln Typ

—

—

—

10

0.76

0.2

—

1.4

—

10

—

1

—

IS

25

—

50

Max Unit

10

MA

2

mA

mA

30

60

Volte

1,6

2.S

2

Volts

mA

ao

60

—

MS

ia

—

— V/ia

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