2N5564 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
2N5564 Datasheet PDF : 5 Pages
| |||
2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 15 V, VGS = 0
80
160
On-Resistance vs. Drain Current
100
TA = 25_C
80
60
rDS
IDSS
120
VGS(off) = –2 V
60
40
80
40
20
40
0
0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes 0.7%/_C
160
0
–10
120
VGS(off) = –2 V
80
40
0
–55 –35 –15 5
25 45 65 85 105 125
TA – Temperature (_C)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
500
gfs and gos @ VDS = 15 V
VGS = 0 V, f = 1 kHz
40
400
30
gfs
gos
200
20
200
10
100
0
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
20
0
1
5
4
3
2
10
100
ID – Drain Current (mA)
Turn-On Switching
tr approximately independent of ID
VDG = 5 V, RG = 50 W
VGS(L) = –10 V
tr
td(on) @
ID = 12 mA
1
td(on) @
ID = 3 mA
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDG = 5 V, VGS(L) = –10 V
24
tf
18
VGS(off) = –2 V
12
td(off)
6
0
0
2
4
6
8
10
ID – Drain Current (mA)
www.vishay.com
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