2N6660X View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
2N6660X Datasheet PDF : 2 Pages
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2N6660X
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
BVDSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
DYNAMIC CHARACTERISTICS
VGS = 0V
ID = 10μA
60
VDS = VGS ID = 1mA
0.8
VGS = ±15V
VDS = 0V
TCASE = 125°C
VDS = Max. Ratings VGS = 0V
VDS =0.8VMax.Ratings
VGS = 0V
TCASE = 125°C
VDS = ≥2VDS(ON) VGS = 10V
1.5
VGS = 5V
ID = 0.3A
VGS = 10V
ID = 1A
TCASE = 125°C
VGS = 5V
ID = 0.3A
VGS = 10V ID = 1A
gFS*
Forward Transconductance
VDS = 25V ID = 0.5A
170
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
f = 1MHz
VDS = 25V
SWITCHING CHARACTERISTICS
tON
Turn–On Time
VDD = 25V ID = 1A
tOFF
Turn–Off Time
RL = 23Ω
RG = 25Ω
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM
Source Current1 (Body Diode)
VSD
Diode Forward Voltage 1
Modified MOSPOWER ,
Symbol Showing
/
The Integral
PN Juncion Rectifier
5
IS = -1.1A
VGS = 0V
TCASE = 125°C
1 Pulse Test: Pulse width ≤ 300 μs , Duty Cycle ≤ 2%
Typ.
100
1.5
1
5
1
50
1.7
4.7
2.7
3.9
1.4
2.7
195
35
33
2
8
8
Max. Unit
V
2.2
±100
nA
±500
10
μA
500
A
5
3
Ω
4.2
1.5
V
3
mS
50
40
pF
10
10
ns
10
-1.1
A
-3
-0.9
V
RθJA
RθJC
Parameter
Thermal Resistance, Junction to Ambient (Free Air Operation)
Thermal Resistance, Junction to Case
Min.
Typ.
Max.
170
20
Unit
C/W
C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC: 7083 iss 1
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