2SA1566 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SA1566 Datasheet PDF : 6 Pages
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2SA1566
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
–120
V
–120
V
–5
V
–100
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO –120 —
voltage
Collector to emitter breakdown V(BR)CEO –120 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE*1
250 —
Collector to emitter saturation VCE(sat)
—
—
voltage
Base to emitter voltage
VBE(sat)
—
—
Notes: 1. The 2SA1566 is grouped by hFE as follows.
2. Pulse test
Grade
D
E
Mark
JID
JIE
hFE
250 to 500 400 to 800
Max Unit
—
V
—
V
—
V
–0.1 µA
–0.1 µA
800
–0.15 V
–1.0 V
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA*2
IC = –10 mA, IB = –1 mA*2
IC = –10 mA, IB = –1 mA*2
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