2SA1767 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA1767 Datasheet PDF : 3 Pages
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Transistors
2SA1767
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473A
■ Features
• High collector-emitter voltage (Base open) VCEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−300
V
Collector-emitter voltage (Base open) VCEO
−300
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−70
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−300
V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0
−5
V
Forward current transfer ratio *
hFE VCE = −10 V, IC = −5 mA
30
150
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.6 V
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
50
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
7
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
hFE
30 to 100
60 to 150
Publication date: January 2003
SJC00030BED
1
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