2SA1721(2003) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA1721 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1721
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
2SA1721
Unit: mm
· High voltage: VCBO = −300 V, VCEO = −300 V
· Low saturation voltage: VCE (sat) = −0.5 V (max)
· Small collector output capacitance: Cob = 5.5 pF (typ.)
· Complementary to 2SC4497
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-300
V
-300
V
-5
V
-100
mA
-20
mA
150
mW
150
°C
-55~150
°C
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
1
2003-03-27
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