A1693 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

A1693

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

Silicon PNP Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= -80V(Min)

·Good Linearity of hFE

·Complement to Type 2SC4466

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-6

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-3

A

60

W

150

℃

-55~150

℃

Product Specification

2SA1693

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