2SA2046 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA2046 Datasheet PDF : 2 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2046
Silicon PNP epitaxial planar type
For DC-DC converter
/ ■ Features
• Low collector-emitter saturation voltage VCE(sat)
e . • Mini type package, allowing downsizing of the equipment and
ge automatic insertion through the tape packing.
nc d le sta ■ Absolute Maximum Ratings Ta = 25°C
yc Parameter
Symbol Rating
Unit
a e lifec Collector-base voltage (Emitter open) VCBO
−30
V
ct Collector-emitter voltage (Base open) VCEO
−20
V
n u du Emitter-base voltage (Collector open) VEBO
−5
V
ro Collector current
IC
−1.5
A
te tin r P Peakcollectorcurrent
ICP
−5
A
fou e n. Collector power dissipation *
PC
400
mW
ing typ tio Junction temperature
Tj
150
°C
in n llow nce e ed rma Storage temperature
Tstg −55 to +150 °C
s fo na typ typ info n/ Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3Z
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
a coed incnlueddemainintetenacnocnetinuueedd typoeut latoensitc.co.jp/e ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu pla ma dis tin ab as Parameter
Symbol
Conditions
Min
on ed con RL an Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−30
isc lan is U n.p Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−20
/D p d ing ico Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
D nce llow em Forward current transfer ratio *
hFE VCE = −2 V, IC = −100 mA
160
a fo .s Collector-emitter saturation voltage * VCE(sat) IC = −500 mA, IB = −25 mA
ten isit ww Transition frequency
fT
VCB = −10 V, IE = 20 mA, f = 200 MHz
ain e v ://w Collector output capacitance
M as ttp (Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
560
−50 −150
170
25 35
Unit
V
V
V
mV
MHz
pF
le h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P 2. *: Pulse measurement
Publication date: January 2003
SJC00043BED
1
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