2SA2058(2001) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SA2058
(Rev.:2001)

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2058

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

2SA2058

Unit: mm

• High DC current gain: hFE = 200 to 500 (IC = −0.2 A)

• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

• High-speed switching: tf = 25 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power

dissipation

DC

t = 10 s

Junction temperature

Storage temperature range

VCBO

−20

V

VCEO

−10

V

VEBO

IC

ICP

IB

−7

V

−1.5

A

−2.5

−150

mA

PC

500

mW

(Note)

750

Tj

150

°C

Tstg

−55 to 150

°C

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm2)

JEDEC

―

JEITA

―

TOSHIBA

2-3S1A

Weight: 0.01 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

Switching time

Storage time

Fall time

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

Cob

tr

tstg

tf

VCB = −20 V, IE = 0

VEB = −7 V, IC = 0

IC = −10 mA, IB = 0

VCE = −2 V, IC = −0.2 A

VCE = −2 V, IC = −0.6 A

IC = −0.6 A, IB = −20 mA

IC = −0.6 A, IB = −20 mA

VCB = −10 V, IE = 0, f = 1 MHz

See Figure 1 circuit diagram.

VCC ∼− −6 V, RL = 10 Ω

−IB1 = IB2 = −20 mA

Min Typ. Max Unit



 −100 nA



 −100 nA

−10





V

200



500

125







 −0.19 V



 −1.10 V



12



pF



50





115



ns



25



1

2001-10-29

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