2SA2058(2001) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SA2058
(Rev.:2001)

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

IC – VCE

−2.4

Common emitter

−2.0

−80 −60

−40

Ta = 25°C

Single nonrepetitive

pulse

−20

−1.6

−10

−1.2

−8

−6

−0.8

−4

IB = −2 mA

−0.4

0

0

−0.2

−0.4

−0.6

−0.8

−1.0

−1.2

Collector-emitter voltage VCE (V)

2SA2058

10000

hFE – IC

Common emitter

VCE = −2 V

Single nonrepetitive

pulse

1000

100

Ta = 100°C

25

−55

10

−0.001

−0.01

−0.1

−1

Collector current IC (A)

−1

Common emitter

VCE (sat) – IC

IC/IB = 30

Single nonrepetitive pulse

−0.1

Ta = 100°C

25

−0.01

−55

−0.001

−0.001

−0.01

−0.1

−1

Collector current IC (A)

−10

Common emitter

VBE (sat) – IC

IC/IB = 30

Single nonrepetitive pulse

−55

−1

Ta = 100°C

25

−0.1

−0.01

−0.001

−0.01

−0.1

−1

Collector current IC (A)

−2.0

Common emitter

VCE = −2 V

−1.6 Single nonrepetitive

pulse

IC – VBE

−1.2

−0.8

Ta = 100°C

−0.4

25 −55

0

0

−0.4

−0.8

−1.2

−1.6

Base-emitter voltage VBE (V)

3

2001-10-29

Share Link: