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Part Name
Description
2SA2065(2001) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA2065
(Rev.:2001)
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
2SA2065 Datasheet PDF : 5 Pages
1
2
3
4
5
-
1.6
Common emitter
Ta
=
25°C
Single nonrepetitive
pulse
-
1.2
I
C
– V
CE
-
30
-
0.8
-
0.4
-
20
-
15
-
10
-
8
-
6
-
4
IB
= -
2 mA
0
0
-
0.2
-
0.4
-
0.6
-
0.8
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
-
1
Common emitter
IC/IB
=
30
Single nonrepetitive pulse
-
0.1
-
0.01
Ta
=
100°C
-
55
25
-
0.001
-
0.001
-
0.01
-
0.1
-
1
-
10
Collector current I
C
(A)
2SA2065
1000
h
FE
– I
C
Ta
=
100°C
100
25
-
55
10
Common emitter
VCE
= -
2 V
Single nonrepetitive pulse
1
-
0.001
-
0.01
-
0.1
-
1
-
10
Collector current I
C
(A)
V
BE (sat)
– I
C
-
10
Common emitter
IC/IB
=
30
Single nonrepetitive pulse
-
55
25
-
1
Ta
=
100°C
-
0.1
-
0.001
-
0.01
-
0.1
-
1
-
10
Collector current I
C
(A)
-
1.5
Common emitter
VCE
= -
2 V
Single nonrepetitive
-
1.2
pulse
I
C
– V
BE
-
0.9
-
0.6
-
0.3
0
0
Ta
=
100°C
-
55
25
-
0.3
-
0.6
-
0.9
-
1.2
-
1.5
Base-emitter voltage V
BE
(V)
3
2001-10-29
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