2SA634K View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SA634K Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A
VBEsat Base-emitter saturation voltage
IC=-3.0A ;IB=-0.3 A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-30V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.1A ; VCE=-5V
hFE-2 Classifications
N
M
L
K
40-60 50-100 80-160 120-250
Product Specification
2SA634
MIN TYP. MAX UNIT
-2.0
V
-2.0
V
-30
V
20
40
250
-1.0 μA
-1.0 μA
75
pF
55
MHz
2
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