2SB1176 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SB1176 Datasheet PDF : 4 Pages
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Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1746
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−130
V
Collector-emitter voltage (Base open) VCEO
−80
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
−5
A
Peak collector current
ICP
−10
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
−80
Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1 VCE = −2 V, IC = − 0.1 A
45
hFE2 * VCE = −2 V, IC = −2 A
90
Collector-emitter saturation voltage
VCE(sat) IC = −4 A, IB = − 0.2 A
Base-emitter saturation voltage
VBE(sat) IC = −4 A, IB = − 0.2 A
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
Turn-on time
Storage time
ton
IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A
tstg
VCC = −50 V
Fall time
tf
−10
−50
260
− 0.5
−1.5
30
0.13
0.5
0.13
V
µA
µA
V
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
Publication date: March 2003
SJD00052AED
1
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