2SB1179 View Datasheet(PDF) - Panasonic Corporation

Part Name

Description

Manufacturer

2SB1179

Silicon PNP Epitaxial Planar Type

Panasonic Corporation 

Power Transistors

2SB1179, 2SB1179A

Silicon PNP epitaxial planar type darlington

For power amplification and switching

Complementary to 2SD1749, 2SD1749A

■ Features

• High forward current transfer ratio hFE which has satisfactory linearity

• High-speed switching

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

■ Absolute Maximum Ratings TC = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage 2SB1179 VCBO

−60

V

(Emitter open)

2SB1179A

−80

Collector-emitter voltage 2SB1179 VCEO

−60

V

(Base open)

2SB1179A

−80

Emitter-base voltage (Collector open) VEBO

−5

V

Collector current

IC

−4

A

Peak collector current

ICP

−8

A

Collector power dissipation

PC

15

W

Ta = 25°C

1.3

Junction temperature

Tj

150

°C

Storage temperature

Tstg −55 to +150 °C

7.0±0.3

3.0±0.2

2.0±0.2

Unit: mm

3.5±0.2

0˚ to 0.15˚

1.1±0.1

0.75±0.1 0.4±0.1

2.3±0.2

4.6±0.4

123

0.9±0.1

0˚ to 0.15˚

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

Internal Connection

C

B

■ Electrical Characteristics TC = 25°C ± 3°C

E

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-emitter voltage 2SB1179 VCEO IC = −30 mA, IB = 0

−60

V

(Base open)

2SB1179A

−80

Base-emitter voltage

Collector-base cutoff

current (Emitter open)

VBE

2SB1179 ICBO

2SB1179A

Collector-emitter cutoff

current (Base open)

2SB1179 ICEO

2SB1179A

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

IEBO

hFE1

hFE2 *

VCE(sat)

Transition frequency

fT

Turn-on time

ton

Storage time

tstg

Fall time

tf

VCE = −3 V, IC = −3 A

VCB = −60 V, IE = 0

VCB = −80 V, IE = 0

VCE = −40 V, IB = 0

VCE = −40 V, IB = 0

VEB = −5 V, IC = 0

VCE = −3 V, IC = − 0.5 A

VCE = −3 V, IC = −3 A

IC = −3 A, IB = −12 mA

IC = −5 A, IB = −20 mA

VCE = −10 V, IC = − 0.5 A, f = 1 MHz

IC = −3 A, IB1 = −12 mA, IB2 = 12 mA

VCC = −50 V

1 000

2 000

−2.5

V

−200 µA

−200

−500 µA

−500

−2

mA



10 000

−2

V

−4

20

MHz

0.3

µs

2.0

µs

0.5

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

P

hFE2

2 000 to 5 000 4 000 to 10 000

Publication date: February 2003

SJD00055AED

1

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