2SB1179, 2SB1179A
PC Ta
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
15
10
(1)
5
(2)
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
−6
TC=25˚C
−5
IB=–3.0mA
–2.5mA
–2.0mA
−4
–1.5mA
–1.0mA
–0.5mA
−3
–0.4mA
−2
–0.3mA
–0.2mA
−1
0
0
−1 −2 −3 −4 −5
Collector-emitter voltage VCE (V)
IC VBE
−10
VCE=–3V
−8
−6
25˚C
TC=100˚C
–25˚C
−4
−2
0
0
− 0.8 −1.6 −2.4 −3.2
Base-emitter voltage VBE (V)
−100
−10
−1
− 0.1
VCE(sat) IC
IC/IB=250
TC=100˚C
25˚C
–25˚C
hFE IC
106
VCE=–3V
105
TC=100˚C
25˚C
104
–25˚C
103
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
102
− 0.01
− 0.1
−1
−10
Collector current IC (A)
1
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
Safe operation area
−100
Non repetitive pulse
103
TC=25˚C
−10 ICP
102
IC
t=1ms
t=10ms
−1
10
t=300ms
− 0.1
1
Rth t
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
2
SJD00055AED