2SB1193 View Datasheet(PDF) - Panasonic Corporation

Part Name

Description

Manufacturer

2SB1193

Silicon PNP epitaxial planar type darlington

Panasonic Corporation 

2SB1193

80

60

(1)

40

PC  Ta

(1)TC=Ta

(2)With a 100×100×2mm

Al heat sink

(3)Without heat sink

(PC=2.0W)

20

(2)

(3)

0

0

40

80

120

160

Ambient temperature Ta (°C)

IC  VCE

−10

IB=–5mA TC=25˚C

–4mA

–3mA

−8

–2mA

–1.5mA

−6

–1mA

VCE(sat)  IC

−10

(1) IC/IB=500

(2) IC/IB=250

(3) IC/IB=100

TC=25 C

−1

(1)

(2)

(3)

−4

–0.75mA

− 0.1

−2

–0.5mA

0

0 −2 −4 −6 −8 −10 −12

Collector-emitter voltage VCE (V)

− 0.01

− 0.1

−1

−10

Collector current IC (A)

VBE(sat)  IC

−10

(1)IC/IB=500

(2)IC/IB=250

(3)IC/IB=100

TC=25˚C

(2) (3)

(1)

−1

− 0.1

hFE  IC

104

TC=100˚C

VCE=–3V

25˚C

–25˚C

103

102

ton, tstg, tf  IC

100

Pulsed tw=1ms

Duty cycle=1%

IC/IB=500

(–IB1=IB2)

10

VCC=–50V

TC=25˚C

tstg

tf

1

ton

0.1

− 0.01

− 0.1

−1

−10

Collector current IC (A)

10

− 0.1

−1

−10

Collector current IC (A)

0.01

0

−2

−4

−6

−8

Collector current IC (A)

Safe operation area

Rth  t

−100

Non repetitive pulse

102

(1)Without heat sink

(1)

TC=25˚C

(2)With a 100×100×2mm Al heat sink

ICP

−10

10

(2)

IC

t=10ms

t=1ms

−1

1

DC

− 0.1

10−1

− 0.01

−1

−10

−100

−1 000

Collector-emitter voltage VCE (V)

10−2

10−4

10−3

10−2

10−1

1

10

Time t (s)

102

103

104

2

SJD00059AED

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