RF1K49223 View Datasheet(PDF) - Intersil

Part Name

Description

Manufacturer

RF1K49223

2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET™ Power MOSFET

Intersil 

RF1K49223

Absolute Maximum Ratings TA= 25oC Unless Otherwise Specified

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Power Dissipation . . .

Derate Above 25oC

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PD

..

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

RF1K49223

-30

-30

±20

2.5

Refer to Peak Current Curve

Refer to UIS Curve

2

0.016

-55 to 150

300

260

UNITS

V

V

V

A

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNITS

Drain to Source Breakdown Voltage

Gate to Source Threshold Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Drain to Source On Resistance

Turn-On Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-Off Time

Total Gate Charge

Gate Charge at -10V

Threshold Gate Charge

BVDSS ID = 250µA, VGS = 0V, (Figure 12)

-30

-

-

V

VGS(TH)

IDSS

VGS = VDS, ID = 250µA, (Figure 11)

VDS = -30V,

VGS = 0V

TA = 25oC

TA = 150oC

-1

-

-3

V

-

-

-1

µA

-

-

-50

µA

IGSS

VGS = ±20V

-

-

±100

nA

rDS(ON)

tON

td(ON)

tr

ID = 2.5A,

(Figure 9, 10)

VGS = -10V

VGS = -4.5V

VDD = -15V, ID ≅ 2.5A,

RL = 6Ω, VGS = -10V,

RGS = 25Ω

-

-

0.150

Ω

-

-

0.360

Ω

-

-

40

ns

-

9

-

ns

-

19

-

ns

td(OFF)

-

60

-

ns

tf

-

34

-

ns

tOFF

-

-

140

ns

Qg(TOT)

Qg(-10)

VGS = 0V to -20V

VGS = 0V to -10V

VDD = -24V,

ID ≅ 2.5A,

RL = 9.6Ω

-

28

35

nC

-

15

19

nC

Qg(TH) VGS = 0V to -2V Ig(REF) = -1.0mA

-

1.5

1.9

nC

(Figure 14)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Ambient

CISS

COSS

CRSS

RθJA

VDS = -25V, VGS = 0V,

f = 1MHz

(Figure 13)

Pulse Width = 1s

Device mounted on FR-4 material

-

580

-

pF

-

260

-

pF

-

38

-

pF

-

-

62.5

oC/W

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Source to Drain Diode Voltage

Reverse Recovery Time

VSD

trr

ISD = -2.5A

ISD =-2.5A, dISD/dt = 100A/µs

MIN

TYP

MAX UNITS

-

-

-1.25

V

-

-

49

ns

8-162

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