IRFF320 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
IRFF320 Datasheet PDF : 7 Pages
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IRFF320
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF320
400
400
2.5
10
20
20
0.16
100
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
400
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 2)
Gate to Threshold Voltage
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.5
VGS(TH) VGS = VDS, ID = 250µA
2.0
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
rDS(ON) VGS = 10V, ID = 1.25A (Figures 8, 9)
-
gfs
VDS ≥ 10V, ID = 2.0A (Figure 12)
1.7
td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 2.5A, RG = 9.1Ω,
-
tr
VGS = 10V, RL = 78.2Ω For VDSS = 200V,
RL = 68.2Ω For VDSS = 175V (Figures 17, 18),
-
td(OFF) MOSFET Switching Times are Essentially
-
tf
Independent of Operating Temperature
-
Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Qgs
Essentially Independent of Operating Temperature
-
Gate to Drain “Miller” Charge
Input Capacitance
Qgd
-
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
Internal Source Inductance
LD
Measured from the Drain Modified MOSFET
-
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS
Measured from the
Inductances
-
Source Lead, 5mm
D
(0.2in) from Header to
Source Bonding Pad
LD
G
LS
S
TYP MAX UNITS
-
-
V
-
±100 nA
-
25
µA
-
250
µA
-
-
A
-
4.0
V
1.5 1.800 Ω
2.2
-
S
20
40
ns
25
50
ns
50
100
ns
25
50
ns
12
15
nC
6.0
-
nC
6.0
-
nC
450
-
pF
100
-
pF
20
-
pF
5.0
-
nH
15
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
-
-
6.25 oC/W
-
-
175 oC/W
2
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