IRFF320 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
IRFF320 Datasheet PDF : 7 Pages
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IRFF320
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
-
-
2.5
A
D
-
-
10
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 2.5A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
-
-
1.6
V
-
450
-
ns
-
3.1
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
0.2
1.0 0.1
0.05
0.02
0.01
0.1
10-5
PDM
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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