2SB1353 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1353

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1353

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= -0.1mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -0.1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Cain

IC= -0.1A ; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -0.1A ; VCE= -5V

MIN TYP. MAX UNIT

-120

V

-120

V

-5

V

-2.0

V

-10 μA

-10 μA

60

320

50

MHz

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

isc Website：www.iscsemi.cn

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