2SB642 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SB642 Datasheet PDF : 3 Pages
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Transistor
Cre — VCE
6
IC=–1mA
f=10.7MHz
Ta=25˚C
5
4
3
2
1
0
0 –5 –10 –15 –20 –25 –30
Collector to emitter voltage VCE (V)
h Parameter — IE
300
hfe
100
30
hoe (µS)
10
hie (kΩ)
3
VCE=–5V
f=270Hz
1
hre (!10–4)
Ta=25˚C
0.1
0.3
1
3
10
Emitter current IE (mA)
NF — IE
6
VCB=–5V
f=1kHz
5
Rg=2kΩ
Ta=25˚C
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3 10
Emitter current IE (mA)
h Parameter — VCE
300
IE=2mA
f=270Hz
hfe
Ta=25˚C
100
30
hoe (µS)
10
3 hre (!10–4)
hie (kΩ)
1
–1
–3
–10
–30
–100
Collector to emitter voltage VCE (V)
2SB642
NF — IE
20 VCB=–5V
18
Rg=50kΩ
Ta=25˚C
16
14
12
f=100Hz
10
1kHz
8
6
10kHz
4
2
0
0.1
0.3
1
3
10
Emitter current IE (mA)
ICBO — Ta
100
VCB=–10V
30
10
3
1
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
3
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