B716A View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
B716A Datasheet PDF : 6 Pages
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2SB715, 2SB716, 2SB716A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SB715
2SB716
2SB716A Unit
–100
–120
–140
V
–100
–120
–140
V
–5
–5
–5
V
–50
–50
–50
mA
750
750
750
mW
150
150
150
°C
–55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB715
2SB716
2SB716A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO –100 — —
–120 — —
–140 — —
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –100 — —
–120 — —
–140 — —
V
IC = –1 mA,
RBE = ∞
Collector cutoff current ICBO
— — –0.5 — — — — — — µA VCB = –80 V, IE = 0
— — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0
DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500
VCE = –12 V,
IC = –2 mA
hFE2
125 — — 125 — — 125 — —
VCE = –12 V,
IC = –10 mA
Base to emitter voltage VBE
— — –0.75 — — –0.75 — — –0.75 V
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat) — — –0.2 — — –0.2 — — –0.2 V
IC = –10 mA,
IB = –1 mA
Gain bandwidth product fT
— 150 —
— 150 —
— 150 —
MHz VCE = –12 V,
IC = –5 mA
Collector output
capacitance
Cob
— 1.8 — — 1.8 —
— 1.8 —
pF VCB = –25 V, IE = 0,
f = 1 MHz
Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by hFE1 as follows.
D
E
2SB715, 2SB716 250 to 500 400 to 800
2SB716A
250 to 500 —
2
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