2SC1080 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC1080 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1079 2SC1080
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC1079
120
V(BR)CEO
Collector-emitter
breakdown voltage
IC=0.1A ;IB=0
V
2SC1080
100
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
2.5
V
ICBO
Collector cut-off current
VCB=50V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
固I电NC半H导A体NGE SEMICONDUCTOR hFE-2
DC current gain
fT
Transition frequency
hFE-1 Classifications
R
Y
IC=2A ; VCE=5V
IC=7A ; VCE=5V
IC=2A ; VCE=5V
40
140
15
4
MHz
40-80
70-140
2
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