C1345K View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

C1345K

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC1345 (K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

55

V

50

V

5

V

100

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit

Collector to base breakdown V(BR)CBO 55

—

—

V

voltage

Collector to emitter breakdown V(BR)CEO 50

—

—

V

voltage

Emitter to base breakdown

voltage

V(BR)EBO

5

—

—

V

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

250 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

0.5 µA

0.5 µA

1200

0.75 V

0.5 V

Collector output capacitance Cob

—

2.3

3.5

pF

Gain bandwidth product

Noise figure

fT

—

230 —

MHz

NF

—

—

8

dB

—

—

1

dB

Note: 1. The 2SC1345(K) is grouped by hFE as follows.

D

E

F

250 to 500 400 to 800 600 to 1200

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 12 V, IC = 2 mA

VCE = 6 V, IC = 0.1 mA,

f = 10 Hz, Rg = 10 kΩ

VCE = 6 V, IC = 0.1 mA,

f = 1 kHz, Rg = 10 kΩ

2

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