Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1893
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For line-operated horizontal deflection
output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体 Absolute maximum ratings(Ta=℃)
固I电NC半HANGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
500
5
UNIT
V
V
V
IC
Collector current
3.5
A
PC
Collector power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃