INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2242
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
300
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA
3.0
V
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 50mA ; VCE= 10V
VCB= 240V; IE=0
0.9
V
1.0 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0 μA
hFE
COB
fT
www.iscsemi.cn DC Current Gain
IC= 50mA ; VCE= 10V
Output Capacitance
IE= 0 ; VCB= 50V; ftest=1MHz
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 50V
40
5.5
20
50
170
12
pF
MHz
isc Website:www.iscsemi.cn
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