2SC1922 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC1922

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.6A

ICBO

Collector cut-off current

VCB=600V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

Product Specification

2SC1922

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

10

µA

10

µA

8

40

2

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