2SC2480(2003) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SC2480 Datasheet PDF : 4 Pages
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Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
30
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: R
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio *
Transition frequency
Reverse transfer capacitance
(Common base)
VCBO
VEBO
VBE
hFE
fT
Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 800
VCE = 6 V, IC = 0, f = 1 MHz
720
1 300
0.8
250
1 600
V
V
mV
MHz
pF
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0 1.5
pF
Power gain
GP VCB = 10 V, IE = −1 mA, f = 200 MHz
20
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
T
S
No-rank
hFE
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Publication date: March 2003
SJC00116BED
1
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