2SC2334-M View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC2334-M Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2334
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=5.0A ,IB=0.5A,L=1mH
100
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
0.6
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A; IB=0.5A
VCB=100V; IE=0
VCE=100V; VBE(off)=-1.5V
Ta=125℃
VEB=5V; IC=0
1.5
V
10
μA
10
μA
1.0
mA
10
μA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
40
200
hFE-3
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A ; VCE=5V
20
0.5
IC=5.0A IB1=-IB2=0.5A
RL=10Ω;VCC≈50V
1.5
0.5
μs
μs
μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
2
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