2SC2438 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC2438

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=100μA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100μA ; IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=4A; IB=0.4A

ICBO

Collector cut-off current

VCB=150V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=4 A ; VCE=1V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=4A; IB1=0.4A

IB2=-0.4A;RL=5Ω

Product Specification

2SC2438

MIN TYP. MAX UNIT

80

V

150

V

7

V

0.5

V

1.2

V

100 μA

100 μA

30

0.5 μs

2.5 μs

0.3 μs

2

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