2SC2873(2004) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SC2873 Datasheet PDF : 5 Pages
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IC – VBE
2.0
Common emitter
VCE = 2 V
1.5
Ta = 100°C 25 −55
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2SC2873
5000
3000
Safe Operating Area
IC max (pulse)*
IC max (continuous)
1000
500
300
100
100 ms*
1 S*
DC operation
Ta = 25°C
1 ms*
10 ms*
50
*: Single no repetitive pulse
30 Ta = 25°C
Curves must be derated linearly
10
5
0.1
with increase in temperature
Tested without a substrate
0.3
1
3
VCEO max
10
30
100
Collector-emitter voltage VCE (V)
4
2004-07-07
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