C2816 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
C2816 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; RBE=∞;L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
VCB=400V ;IE=0
VCE=350V ; RBE=∞
hFE-1
DC current gain
IC=2.5 A ; VCE=5V
hFE-2
DC current gain
IC=5 A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=-IB2=1A
VCC=150V
Product Specification
2SC2816
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
50 μA
50 μA
15
7
0.5 μs
1.5 μs
0.5 μs
2
Share Link: 