C2716 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

C2716

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2716

DESCRIPTION

·High Power Gain-

: Gp≥12dB,f= 27MHz, PO= 16W

·High Reliability

APPLICATIONS

·Designed for RF power amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

VCBO

VCEO

VEBO

www.iscsemi.cn PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE UNIT

80

V

30

V

5

V

ICM

Collector Current

6

A

Collector Power Dissipation

@TC=25℃

PC

Collector Power Dissipation

@Ta=25℃

20

W

1.7

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

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