C3152 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

C3152

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

2SC3152

Symbol

Conditions

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEO(sus)

VCEX(sus)1

VCEX(sus)2

ton

tstg

tf

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=3A, L=50µH, IB=1A

IC=1A, IB1=0.2A, IB2=–0.2A, L=2mH, clamped

IC=0.5A, IB1=0.4A, IB2=–0.1A, L=5mH, clamped

IC=2A, IB1=0.4A, IB2=–0.8A, RL=20Ω, VCC=400V

IC=2A, IB1=0.4A, IB2=–0.8A, RL=20Ω, VCC=400V

IC=2A, IB1=0.4A, IB2=–0.8A, RL=20Ω, VCC=400V

Ratings

Unit

min typ max

2.0 V

1.5 V

900

V

800

V

7

V

800

V

800

V

900

V

1.0 µs

3.0 µs

0.7 µs

Switching Time Test Circuit

No.1071–2/4

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