Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBE(sat) Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
VCB=750V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
2SC2981
MIN TYP. MAX UNIT
800
V
900
V
7
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
10
2