C3306 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
C3306 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3306
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
1.5
V
VBEsat
ICBO
Base-emitter saturation voltage
Collector cut-off current
IC=5A; IB=0.5A
VCB=400V; IE=0
2.0
V
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE
DC current gain
IC=5A ; VCE=5V
10
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR tr
Rise time
1.0
tstg
Storage time
VCC=200V; IC=5.0A
IB1=-IB2=0.5A;RL=40 Ω
2.5
tf
Fall time
1.0
μs
μs
μs
2
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