2SC3258 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC3258 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector -emitter breakdown voltage IC=10mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.15A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=3A ; VCE=1V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=4V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A IB1=- IB2=0.15A
RL=10Ω;VCC≈30V
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SC3258
MIN TYP. MAX UNIT
80
V
0.4
V
1.2
V
1
μA
1
μA
70
240
40
80
pF
120
MHz
0.2
μs
1.0
μs
0.1
μs
2
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