2SC3465 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SC3465 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0;
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A;IB=1.2A
ICBO
Collector cut-off current
VCB=800V;IE=0
IEBO
Emitter cut-off current
VEB=7V;IC=0
hFE-1
DC current gain
IC=0.8A ;VCE=5V
hFE-2
DC current gain
IC=4A ;VCE=5V
fT
Transition freuquency
IC=0.8A ;VCE=10V
COB
Collector output capacitance
IE=0 ;VCB=10V,f=1MHz
hFE-1 classifications
K
L
M
10-20
15-30
20-40
www.jmnic.com
2SC3465
MIN TYP. MAX UNIT
800
V
1100
V
7
V
2.0
V
1.5
V
10
μA
10
μA
10
40
10
15
MHz
240
pF
2
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