2SC3451 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC3451 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3451
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
500
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
800
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
1.0
V
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1.2A ; VCE=5V
15
50
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR Cob
Output capacitance
fT
Transition frequency
Switching times
ton
Turn-on time
IC=6A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=1.2A ; VCE=10V
8
160
18
pF
MHz
IC=7A;RL=28.6Ω
0.5
μs
tstg
Storage time
IB1=1.4A; IB2=-2.8A
3.0
μs
VCC=200V
tf
Fall time
0.3
μs
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
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