2SC3462 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC3462

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3462

DESCRIPTION

·High Breakdown Voltage-

: V(BR)CBO= 1100V(Min)

·Fast Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching regulator Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1100

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4.5

A

ICM

Collector Current-Peak

15

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2

A

100

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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