2SC4497(2003) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SC4497
(Rev.:2003)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

Toshiba 

2SC4497

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC4497

High Voltage Control Applications

· High voltage: VCBO = 300 V, VCEO = 300 V

· Low saturation voltage: VCE (sat) = 0.5 V (max)

· Small collector output capacitance: Cob = 3 pF (typ.)

· Complementary to 2SA1721

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

300

V

300

V

6

V

100

mA

20

mA

200

mW

150

°C

-55~150

°C

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

1

2003-03-27

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