2SC4546 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC4546 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4546
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 3A; IB1= 0.6A; IB2= -1.2A;
VCC= 200V; RL= 67Ω
MIN TYP. MAX UNIT
400
V
0.7
V
1.3
V
100 μA
100 μA
10
25
55
pF
10
MHz
0.5 μs
2.0 μs
0.15 μs
isc Website：www.iscsemi.cn
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