2SC5353 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SC5353

Silicon NPN Triple Diffused Type (PCT process) Transistor

Toshiba 

Safe Operating Area

10

IC max (pulsed)*

10 ms*

IC max (continuous)

1 ms*

1

100 ms*

100 μs*

0.1

DC operation

Tc = 25°C

0.01

*: Single nonrepetitive

pulse Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

0.001

1

3 5 10

30 50 100

VCEO max

300 500 1000

Collector-emitter voltage VCE (V)

2SC5353

30

(1)

20

PC – Ta

(1) Tc = Ta Infinite heat sink

(2) No heat sink

10

(2)

0

0

40

80

120

160

200

Ambient temperature Ta (°C)

4

2006-11-10

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