Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
600
V
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
3.0
V
VBEsat Base-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCB=1500V; IE=0
VEB=5V; IC=0
1.0
mA
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
35
hFE-2
DC current gain
IC=6A ; VCE=5V
4.3
7.5
Cob
Collector output capacitance
固IN电C半H导AN体GE SEMICONDUTOR fT
Transition frequency
Switching times
ts
Storage time
IE=0 ; VCB=10V,f=1MHz
IE=0.1A ; VCE=10V
ICP=5A;IB1(end)=1.0A
fH =64kHz
105
1.7
2.5
3.5
pF
MHz
μs
tf
Fall time
0.15
0.3
μs
2